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Part Details for NTLJD4116NT1G by onsemi
Overview of NTLJD4116NT1G by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for NTLJD4116NT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC3888
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Newark | Mosfet, Dual N-Ch, 30V, 3.7A, Wdfn, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:3.7A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.047Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:700Mv, Powerrohs Compliant: Yes |Onsemi NTLJD4116NT1G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.3460 / $0.7450 | Buy Now |
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DISTI #
83K8685
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Newark | N Channel Mosfet, 30V, Wdfn6, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:3.7A, Continuous Drain Current Id P Channel:3.7A Rohs Compliant: Yes |Onsemi NTLJD4116NT1G Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2760 / $0.3600 | Buy Now |
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DISTI #
08R3952
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Newark | N Channel Mosfet, 30V, Wdfn6, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:3.7A, Continuous Drain Current Id P Channel:3.7A Rohs Compliant: Yes |Onsemi NTLJD4116NT1G Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2850 / $0.2960 | Buy Now |
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DISTI #
488-NTLJD4116NT1GCT-ND
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DigiKey | MOSFET 2N-CH 30V 2.5A 6WDFN Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9399 In Stock |
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$0.2675 / $0.8100 | Buy Now |
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DISTI #
NTLJD4116NT1G
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 3.7A 6-Pin WDFN T/R - Tape and Reel (Alt: NTLJD4116NT1G) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.2654 / $0.3167 | Buy Now |
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DISTI #
863-NTLJD4116NT1G
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Mouser Electronics | MOSFET NFET 2X2 30V 4.6A 70MOHM RoHS: Compliant | 7943 |
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$0.2670 / $0.6900 | Buy Now |
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DISTI #
70341346
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RS | NTLJD4116NT1G Dual N-channel MOSFET Transistor, 2.5 A, 30 V, 6-Pin WDFN | ON Semiconductor NTLJD4116NT1G RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.7100 / $0.8300 | RFQ |
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Future Electronics | Dual N-Channel 30 V 70 mΩ Surface Mount Power Mosfet - WDFN-6 (2x2) RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 54000Reel |
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$0.2400 / $0.2500 | Buy Now |
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DISTI #
NTLJD4116NT1G
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Avnet Asia | Transistor MOSFET Array Dual N-CH 30V 3.7A 6-Pin WDFN T/R (Alt: NTLJD4116NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days | 0 |
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$0.2518 / $0.2816 | Buy Now |
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DISTI #
NTLJD4116NT1G
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Avnet Silica | Transistor MOSFET Array Dual N-CH 30V 3.7A 6-Pin WDFN T/R (Alt: NTLJD4116NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for NTLJD4116NT1G
NTLJD4116NT1G CAD Models
NTLJD4116NT1G Part Data Attributes:
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NTLJD4116NT1G
onsemi
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Datasheet
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Compare Parts:
NTLJD4116NT1G
onsemi
Dual N-Channel µCool?™ Power MOSFET 30V 4.6A 70mΩ, WDFN6 2x2, 0.65P, 3000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | WDFN6 2x2, 0.65P | |
| Package Description | 2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN6, 6 PIN | |
| Pin Count | 6 | |
| Manufacturer Package Code | 506AN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 31 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.52 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |