Datasheets
NTHC5513T1 by:

3.1A, 20V, 0.08ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 1206A-03, CHIPFET-8

Part Details for NTHC5513T1 by onsemi

Overview of NTHC5513T1 by onsemi

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Price & Stock for NTHC5513T1

Part # Distributor Description Stock Price Buy
Win Source Electronics MOSFET N/P-CH 20V CHIPFET 16000
  • 45 $1.1310
  • 110 $0.9280
  • 170 $0.8990
  • 230 $0.8700
  • 300 $0.8410
  • 400 $0.7540
$0.7540 / $1.1310 Buy Now

Part Details for NTHC5513T1

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NTHC5513T1 Part Data Attributes

NTHC5513T1 onsemi
Buy Now Datasheet
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NTHC5513T1 onsemi 3.1A, 20V, 0.08ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 1206A-03, CHIPFET-8
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description CASE 1206A-03, CHIPFET-8
Pin Count 8
Manufacturer Package Code CASE 1206A-03
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.1 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1.1 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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