We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Findchips Blog
Transistors / Power Field-Effect Transistors / NTH4L060N090SC1
Datasheets
NTH4L060N090SC1 by: onsemi

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L, TO-247-4, 450-TUBE

Part Details for NTH4L060N090SC1 by onsemi

Results Overview of NTH4L060N090SC1 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Renewable Energy

NTH4L060N090SC1 Information

NTH4L060N090SC1 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTH4L060N090SC1

Part # Distributor Description Stock Price Buy
DISTI # 81AJ0237
Newark Sic Mosfet, N-Ch, 15V, 66.9A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, ... Continuous Drain Current Id:66.9A, Drain Source Voltage Vds:900V, No. Of Pins:4Pins, Rds(On) Test Voltage:15V, Power Dissipation:320W Rohs Compliant: Yes |Onsemi NTH4L060N090SC1 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 84
  • 1 $7.5800
  • 10 $7.5800
  • 25 $7.5800
  • 50 $7.3500
  • 100 $7.0900
  • 250 $6.9100
$6.9100 / $7.5800 Buy Now
DISTI # 5556-NTH4L060N090SC1-ND
DigiKey SILICON CARBIDE MOSFET, NCHANNEL Min Qty: 1 Lead time: 17 Weeks Container: Tube 483
In Stock
  • 1 $13.1100
  • 30 $8.3937
  • 120 $7.2089
  • 510 $7.0063
$7.0063 / $13.1100 Buy Now
DISTI # 81AJ0237
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET ... - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L - Bulk (Alt: 81AJ0237) more RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks, 4 Days Container: Bulk 84 Partner Stock
  • 1 $9.0900
  • 10 $8.5200
  • 25 $8.0700
  • 50 $7.6400
  • 100 $7.3700
$7.3700 / $9.0900 Buy Now
DISTI # NTH4L060N090SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET ... - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L - Rail/Tube (Alt: NTH4L060N090SC1) more RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 450 $7.2794
  • 900 $7.0098
  • 1,800 $6.7594
  • 2,700 $6.5263
  • 3,600 $6.3088
$6.3088 / $7.2794 Buy Now
DISTI # 863-NTH4L060N090SC1
Mouser Electronics SiC MOSFETs SIC MOSFET 900V TO247-4L 60MOHM RoHS: Compliant 484
  • 1 $12.8500
  • 10 $12.0300
  • 30 $8.4000
  • 120 $7.2000
  • 510 $7.0000
$7.0000 / $12.8500 Buy Now
DISTI # V99:2348_25623559
Arrow Electronics Trans MOSFET N-CH SiC 900V 46A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2124 Americas - 30
  • 1 $6.8850
$6.8850 Buy Now
DISTI # V79:2366_26625848
Arrow Electronics Trans MOSFET N-CH SiC 900V 46A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Date Code: 2124 Americas - 30
  • 1 $6.3700
$6.3700 Buy Now
Future Electronics N-Channel 900 V 46 A 221 W Through Hole Silicon Carbide MOSFET - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks Container: Tube 0
Tube
  • 1 $7.5200
  • 5 $7.4300
  • 30 $7.3400
  • 100 $7.2700
  • 300 $7.1600
$7.1600 / $7.5200 Buy Now
Onlinecomponents.com NTH4L Series 900V 84 mOhm 221W Through Hole N-Channel Power Mosfet - TO-247-4 RoHS: Compliant 0
  • 113 $19.2200
  • 225 $10.2200
  • 338 $7.1800
  • 450 $7.0400
$7.0400 / $19.2200 Buy Now
DISTI # 86017637
Verical Trans MOSFET N-CH SiC 900V 46A 4-Pin(4+Tab) TO-247 Tube Min Qty: 41 Package Multiple: 1 Date Code: 2101 Americas - 1350
  • 41 $9.3250
$9.3250 Buy Now
DISTI # 58005552
Verical Trans MOSFET N-CH SiC 900V 46A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Date Code: 2124 Americas - 450
  • 1 $6.8850
$6.8850 Buy Now
DISTI # 61569608
Verical Trans MOSFET N-CH SiC 900V 46A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Date Code: 2124 Americas - 430
  • 1 $6.3700
$6.3700 Buy Now
Rochester Electronics NTH4L060N090SC1 - Silicon Carbide MOSFET, N-Channel, 900 V, TO247-4L RoHS: Not Compliant Status: Active Min Qty: 1 1350
  • 25 $7.4600
  • 100 $7.0900
  • 500 $6.7100
  • 1,000 $6.3400
  • 10,000 $5.9700
$5.9700 / $7.4600 Buy Now
Future Electronics N-Channel 900 V 46 A 221 W Through Hole Silicon Carbide MOSFET - TO-247-4L Min Qty: 1 Package Multiple: 1 520
null
  • 1 $8.1200
  • 5 $8.0200
  • 25 $7.9300
  • 100 $7.8500
  • 250 $7.7300
$7.7300 / $8.1200 Buy Now
DISTI # NTH4L060N090SC1
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 450 0
  • 450 $7.1000
$7.1000 Buy Now
DISTI # NTH4L060N090SC1
Avnet Asia Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET ... - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L (Alt: NTH4L060N090SC1) more RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days 90
  • 450 $9.7454
  • 900 $9.0957
  • 1,350 $8.8595
  • 2,250 $8.6352
  • 4,500 $8.4220
  • 11,250 $8.2190
  • 22,500 $8.0257
$8.0257 / $9.7454 Buy Now
DISTI # NTH4L060N090SC1
Avnet Silica Silicon Carbide SiC MOSFET EliteSiC 60 mohm 900 V M2 TO2474L Silicon Carbide SiC MOSFET EliteSiC 6... 0 mohm 900 V M2 TO2474L (Alt: NTH4L060N090SC1) more RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NTH4L060N090SC1
EBV Elektronik Silicon Carbide SiC MOSFET EliteSiC 60 mohm 900 V M2 TO2474L Silicon Carbide SiC MOSFET EliteSiC 6... 0 mohm 900 V M2 TO2474L (Alt: NTH4L060N090SC1) more RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 19 Weeks, 0 Days EBV - 150
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1 74
  • 15 $11.6000
  • 74 $10.7100
$10.7100 / $11.6000 Buy Now
Wuhan P&S - Min Qty: 1 340
  • 1 $19.8000
  • 100 $12.6400
  • 500 $10.4200
  • 1,000 $9.5800
$9.5800 / $19.8000 Buy Now

Part Details for NTH4L060N090SC1

NTH4L060N090SC1 CAD Models

  • Part Symbol

    Part Symbol

  • Footprint

    footprint

  • 3D Model

    3D Model

Available Download Formats

Sign in to download CAD models Register or Sign In

By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy

NTH4L060N090SC1 Part Data Attributes

Parametric Data
NTH4L060N090SC1 onsemi
Buy Now Datasheet
Compare Parts:
NTH4L060N090SC1 onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L, TO-247-4, 450-TUBE
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-247-4
Manufacturer Package Code 340CJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 53 Weeks, 4 Days
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 162 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 46 A
Drain-source On Resistance-Max 0.084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 11 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 221 W
Pulsed Drain Current-Max (IDM) 211 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 67 ns
Turn-on Time-Max (ton) 58 ns

NTH4L060N090SC1 Frequently Asked Questions (FAQ)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other side of the board. A minimum of 2oz copper thickness is recommended.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range of -40°C to 150°C.

  • The NTH4L060N090SC1 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of ±2000V and a machine model (MM) of ±200V are recommended.

  • Yes, the NTH4L060N090SC1 is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade devices. However, it's essential to follow the recommended design and testing guidelines to ensure the device meets the specific application requirements.

  • The recommended soldering conditions for the NTH4L060N090SC1 are a peak temperature of 260°C, a soldering time of 10 seconds, and a maximum of 3 reflows. It's essential to follow the recommended soldering profile to prevent damage to the device.