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Power MOSFET 60V 2A 175 mOhm Single N-Channel SOT-223 Logic Level, SOT-223 (TO-261) 4 LEAD, 1000-REEL
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10N9719
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Newark | N Channel Mosfet, 60V, 2A, Sot-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(On):175Mohm, Rds(On) Test Voltage Vgs:5V, Threshold Voltage Vgs Typ:1.7V Rohs Compliant: Yes |Onsemi NTF3055L175T1G Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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NTF3055L175T1G
onsemi
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NTF3055L175T1G
onsemi
Power MOSFET 60V 2A 175 mOhm Single N-Channel SOT-223 Logic Level, SOT-223 (TO-261) 4 LEAD, 1000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Part Package Code | SOT-223 (TO-261) 4 LEAD | |
Package Description | LEAD FREE, CASE 318E-04, TO-261, 4 PIN | |
Pin Count | 4 | |
Manufacturer Package Code | 0.0318 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 65 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 0.175 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.1 W | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for NTF3055L175T1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTF3055L175T1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NTF3055L175T1 | TRANSISTOR 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA, CASE 318E-04, TO-261, 4 PIN, FET General Purpose Power | onsemi | NTF3055L175T1G vs NTF3055L175T1 |
NTF3055L175T3G | 2A, 60V, 0.175ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA, LEAD FREE, CASE 318E-04, TO-261, 4 PIN | onsemi | NTF3055L175T1G vs NTF3055L175T3G |