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Trigger Devices / Silicon Controlled Rectifiers / NTE5458
Datasheets
NTE5458 by: NTE Electronics Inc

Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-202,

Part Details for NTE5458 by NTE Electronics Inc

Results Overview of NTE5458 by NTE Electronics Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

NTE5458 Information

NTE5458 by NTE Electronics Inc is a Silicon Controlled Rectifier.
Silicon Controlled Rectifiers are under the broader part category of Trigger Devices.

Trigger devices initiate or control actions in electronic circuits by producing output signals when specific input conditions are met. They are commonly used in timing circuits and pulse generators. Read more about Trigger Devices on our Trigger Devices part category page.

Price & Stock for NTE5458

Part # Distributor Description Stock Price Buy
DISTI # 31C4760
Newark Thyristor, 4A, 600V, To-202-3, Peak Repetitive Off State Voltage:600V, Gate Trigger Current Max:50... Μa, Average On State Current:-, On State Rms Current:4A, Thyristor Case Style:To-202, No. Of Pins:3Pins, Holding Current Max:3Ma, Msl:-Rohs Compliant: Yes |Nte Electronics NTE5458 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Onlinecomponents.com Silicon Controlled Rectifier- 600vrm 4a TO-202 Senitive Gate Igt=200ua RoHS: Compliant 400 In Stock
  • 25 $2.1000
  • 100 $1.7700
  • 250 $1.6600
  • 500 $1.5500
  • 1,000 $1.4800
  • 2,500 $1.4400
  • 5,000 $1.4000
  • 7,500 $1.3800
$1.3800 / $2.1000 Buy Now
Bristol Electronics   Min Qty: 2 3
  • 2 $4.4800
$4.4800 Buy Now
Quest Components SILICON CONTROLLED RECTIFIER, 4A I(T)RMS, 4000MA I(T), 600V V(DRM), 600V V(RRM), 1 ELEMENT, TO-202 10
  • 1 $3.1050
  • 4 $2.0700
$2.0700 / $3.1050 Buy Now
Quest Components SILICON CONTROLLED RECTIFIER, 4A I(T)RMS, 4000MA I(T), 600V V(DRM), 600V V(RRM), 1 ELEMENT, TO-202 2
  • 1 $6.0000
  • 3 $4.0000
$4.0000 / $6.0000 Buy Now
DISTI # NTE5458
TME Thyristor, 600V, Ifmax: 4A, Igt: 0.2mA, TO202-3, THT, Ifsm: 20A, 1.2us Min Qty: 1 12
  • 1 $1.8900
  • 3 $1.6600
$1.6600 / $1.8900 Buy Now

Part Details for NTE5458

NTE5458 CAD Models

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NTE5458 Part Data Attributes

Parametric Data
NTE5458 NTE Electronics Inc
Buy Now Datasheet
Compare Parts:
NTE5458 NTE Electronics Inc Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-202,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.30.00.80
Samacsys Manufacturer NTE ELECTRONICS
Additional Feature SENSITIVE GATE
Case Connection ANODE
Configuration SINGLE
DC Gate Trigger Current-Max 0.2 mA
DC Gate Trigger Voltage-Max 1.5 V
Holding Current-Max 3 mA
JEDEC-95 Code TO-202
JESD-30 Code R-PSFM-T3
Non-Repetitive Pk On-state Cur 20 A
Number of Elements 1
Number of Terminals 3
On-state Current-Max 4000 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
RMS On-state Current-Max 4 A
Repetitive Peak Off-state Voltage 600 V
Repetitive Peak Reverse Voltage 600 V
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Trigger Device Type SCR

Alternate Parts for NTE5458

This table gives cross-reference parts and alternative options found for NTE5458. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE5458, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N6402 Loras Industries Inc Check for Price Silicon Controlled Rectifier, 16A I(T)RMS, 5000mA I(T), 200V V(DRM), 1 Element, TO-220AB NTE5458 vs 2N6402
NTE5416 NTE Electronics Inc Check for Price Silicon Controlled Rectifier, 4.082A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-126, NTE5458 vs NTE5416
TS820-700T STMicroelectronics Check for Price 8A sensitive gate SCRs NTE5458 vs TS820-700T
S0617BH STMicroelectronics Check for Price 6A, 200V, SCR, TO-220AB NTE5458 vs S0617BH
2N6606 Central Semiconductor Corp Check for Price Silicon Controlled Rectifier, 1.6A I(T)RMS, 275mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-18, NTE5458 vs 2N6606
TYN058 STMicroelectronics Check for Price 8A, 50V, SCR, TO-220AB NTE5458 vs TYN058
S0806MH STMicroelectronics Check for Price 8A, 600V, SCR, TO-220AB NTE5458 vs S0806MH
2N4170 Central Semiconductor Corp Check for Price Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-64 NTE5458 vs 2N4170
S1010L Loras Industries Inc Check for Price Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 100V V(DRM), 1 Element, TO-220AB NTE5458 vs S1010L
AD111 Microsemi Corporation Check for Price Silicon Controlled Rectifier, 2.512A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, TO-39, 3 PIN NTE5458 vs AD111

NTE5458 Related Parts

NTE5458 Frequently Asked Questions (FAQ)

  • The SOA for the NTE5458 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the maximum junction temperature (Tj) and the maximum collector-emitter voltage (Vce). A safe operating area can be estimated to be around 10A/100V for short-term pulses and 5A/50V for continuous operation.

  • To ensure linear operation, the NTE5458 should be biased in the active region, where the base-emitter voltage (Vbe) is around 0.7V and the collector-emitter voltage (Vce) is greater than 1V. The base current should be limited to around 1/10th of the collector current to maintain a stable operating point. Additionally, the collector resistor should be chosen to ensure the collector-emitter voltage is within the recommended range.

  • The recommended heatsink for the NTE5458 depends on the specific application and the maximum power dissipation required. As a general guideline, a heatsink with a thermal resistance of around 10-20°C/W is recommended. The heatsink should be designed to keep the junction temperature (Tj) below 150°C for reliable operation.

  • Yes, the NTE5458 can be used in a switching application, but it's not the most suitable device for high-frequency switching due to its relatively slow switching times (around 10-20ns). However, it can be used in low-frequency switching applications, such as in power supplies or motor control circuits, where the switching frequency is relatively low.

  • The NTE5458 is a proprietary device, but it's similar to other NPN transistors like the 2N5457 or the MJ15024. However, it's essential to verify the electrical and thermal characteristics of any replacement device to ensure compatibility with the specific application.