Part Details for NTE3322 by NTE Electronics Inc
Overview of NTE3322 by NTE Electronics Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for NTE3322
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31C3940
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Newark | Single Igbt, 900V, 60A, Continuous Collector Current:60A, Collector Emitter Saturation Voltage:2.7V, Power Dissipation:200W, Collector Emitter Voltage Max:900V, No. Of Pins:3Pins, Operating Temperature Max:-, Product Range:-, Msl:- Rohs Compliant: Yes |Nte Electronics NTE3322 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Onlinecomponents.com | Igbt N-channel Enhancement 900V IC=60A TO-3P Case High Speed Switch RoHS: Compliant |
1 In Stock |
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$21.6900 / $31.5400 | Buy Now |
Part Details for NTE3322
NTE3322 CAD Models
NTE3322 Part Data Attributes
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NTE3322
NTE Electronics Inc
Buy Now
Datasheet
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NTE3322
NTE Electronics Inc
Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 900 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 400 ns | |
| Gate-Emitter Voltage-Max | 25 V | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 600 ns | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 750 ns | |
| Turn-on Time-Nom (ton) | 550 ns |