Datasheets
NTE2682 by: NTE Electronics Inc

Power Bipolar Transistor,

Part Details for NTE2682 by NTE Electronics Inc

Overview of NTE2682 by NTE Electronics Inc

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Applications Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for NTE2682

Part # Distributor Description Stock Price Buy
DISTI # 79X3532
Newark Transistor Npn Silicon Darlington 160V 8A To-3Pl Case Audio Power Output Compliment To Nte2683 |Nte Electronics NTE2682 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 2368-NTE2682-ND
DigiKey TRANS NPN DARL 160V 8A TO3PL Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT 555
In Stock
  • 1 $8.5500
  • 10 $8.1200
  • 20 $7.7000
  • 50 $7.2700
  • 100 $7.1000
$7.1000 / $8.5500 Buy Now
DISTI # 70515399
RS TRANSISTOR NPN DARLINGTON 160V 8A TO-3PL AUDIO PWR OUTPUT COMPLIMENT TO NTE2683 | NTE Electronics Inc. NTE2682 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $8.7500
  • 50 $8.5800
  • 100 $8.3100
$8.3100 / $8.7500 RFQ
DISTI # NTE2682
TME Transistor: NPN, bipolar, Darlington, 160V, 8A, 150W, TO3PL Min Qty: 1 0
  • 1 $10.1000
  • 3 $9.0500
  • 10 $8.0000
$8.0000 / $10.1000 RFQ

Part Details for NTE2682

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NTE2682 Part Data Attributes:

NTE2682 NTE Electronics Inc
Buy Now Datasheet
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NTE2682 NTE Electronics Inc Power Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 160 V
Configuration DARLINGTON WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 3500
JESD-30 Code R-XSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 3.5 W
Power Dissipation-Max (Abs) 150 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 20 MHz
VCEsat-Max 3 V

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