Part Details for NTE2399 by NTE Electronics Inc
Overview of NTE2399 by NTE Electronics Inc
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NTE2399
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2368-NTE2399-ND
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DigiKey | MOSFET N-CHANNEL 1KV 3.1A TO220 Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT |
32 In Stock |
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$7.2200 / $8.7000 | Buy Now |
DISTI #
70215911
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RS | MOSFET, N-Ch, VDSS 1000V, RDS(ON) 0.5Ohm, ID 3.1A, TO-220,PD 125W, VGS +/-20V, Qg 80nC | NTE Electronics Inc. NTE2399 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 2 |
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$7.6900 / $8.9300 | Buy Now |
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Onlinecomponents.com | Power Mosfet N-channel 1000V Id=3.1A TO-220 Case High Speed Switch Enhancement Mode Rds=5 Ohm RoHS: Compliant |
7 In Stock |
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$6.0700 / $9.3400 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 3.1A I(D), 1000V, 0.5OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1 |
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$9.0750 / $13.6125 | Buy Now |
DISTI #
NTE2399
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TME | Transistor: N-MOSFET, unipolar, 1kV, 2A, Idm: 12A, 125W, TO220 Min Qty: 1 | 0 |
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$7.0100 / $9.8100 | RFQ |
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Master Electronics | Power Mosfet N-channel 1000V Id=3.1A TO-220 Case High Speed Switch Enhancement Mode Rds=5 Ohm RoHS: Compliant |
7 In Stock |
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$6.0700 / $9.3400 | Buy Now |
Part Details for NTE2399
NTE2399 CAD Models
NTE2399 Part Data Attributes
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NTE2399
NTE Electronics Inc
Buy Now
Datasheet
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NTE2399
NTE Electronics Inc
Power Field-Effect Transistor, 3.1A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | NTE ELECTRONICS | |
Avalanche Energy Rating (Eas) | 280 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 3.1 A | |
Drain-source On Resistance-Max | 0.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |