Part Details for NTE2376 by NTE Electronics Inc
Overview of NTE2376 by NTE Electronics Inc
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for NTE2376
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2368-NTE2376-ND
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DigiKey | MOSFET N-CHANNEL 200V 30A TO247 Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT |
1761 In Stock |
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$9.9800 / $12.0200 | Buy Now |
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Onlinecomponents.com | Power Mosfet N-channel 200V Id=30A TO-247 Case High Speed Switch Enhancement Mode Rds=0.085 Ohm RoHS: Compliant |
37 In Stock |
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$7.2500 / $11.1300 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 4 |
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$9.3750 | Buy Now |
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Bristol Electronics | 1 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-247 | 8 |
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$8.1338 / $10.8450 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-247 | 1 |
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$14.7420 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-247 | 3 |
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$12.5000 | Buy Now |
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DISTI #
NTE2376
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TME | Transistor: N-MOSFET, unipolar, 200V, 19A, Idm: 120A, 190W, TO247 Min Qty: 1 | 8 |
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$8.3600 / $11.7000 | Buy Now |
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Master Electronics | Power Mosfet N-channel 200V Id=30A TO-247 Case High Speed Switch Enhancement Mode Rds=0.085 Ohm RoHS: Compliant |
37 In Stock |
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$7.2500 / $11.1300 | Buy Now |
Part Details for NTE2376
NTE2376 CAD Models
NTE2376 Part Data Attributes:
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NTE2376
NTE Electronics Inc
Buy Now
Datasheet
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Compare Parts:
NTE2376
NTE Electronics Inc
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NTE ELECTRONICS | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTE2376
This table gives cross-reference parts and alternative options found for NTE2376. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE2376, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFSL31N20D | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | NTE2376 vs IRFSL31N20D |
| IRFS30N20DTRRPBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Infineon Technologies AG | NTE2376 vs IRFS30N20DTRRPBF |
| IRFL30N20DPBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | NTE2376 vs IRFL30N20DPBF |
| IRFB31N20DPBF | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | NTE2376 vs IRFB31N20DPBF |
| IRFS30N20DPBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Infineon Technologies AG | NTE2376 vs IRFS30N20DPBF |