Datasheets
NTE128 by: NTE Electronics Inc

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39

Part Details for NTE128 by NTE Electronics Inc

Results Overview of NTE128 by NTE Electronics Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Audio and Video Systems

NTE128 Information

NTE128 by NTE Electronics Inc is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTE128

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 2 4
  • 2 $4.4800
$4.4800 Buy Now
Bristol Electronics   3
RFQ
Quest Components TRANSISTOR,BJT,NPN,80V V(BR)CEO,1A I(C),TO-39 10
  • 1 $4.3065
  • 3 $2.8710
  • 10 $2.1533
$2.1533 / $4.3065 Buy Now
Quest Components TRANSISTOR,BJT,NPN,80V V(BR)CEO,1A I(C),TO-39 3
  • 1 $6.0000
  • 3 $4.0000
$4.0000 / $6.0000 Buy Now
Quest Components TRANSISTOR,BJT,NPN,80V V(BR)CEO,1A I(C),TO-39 2
  • 1 $3.0450
$3.0450 Buy Now

Part Details for NTE128

NTE128 CAD Models

NTE128 Part Data Attributes

NTE128 NTE Electronics Inc
Buy Now Datasheet
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NTE128 NTE Electronics Inc Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer NTE ELECTRONICS
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 15
JEDEC-95 Code TO-39
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

Alternate Parts for NTE128

This table gives cross-reference parts and alternative options found for NTE128. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE128, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
KSC1675R Fairchild Semiconductor Corporation Check for Price Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 NTE128 vs KSC1675R
BFT54 TT Electronics Resistors Check for Price Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN NTE128 vs BFT54
KSD471A Samsung Semiconductor Check for Price Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 NTE128 vs KSD471A
2N1574 Central Semiconductor Corp Check for Price Small Signal Bipolar Transistor, 0.05A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN NTE128 vs 2N1574
KSD471A Fairchild Semiconductor Corporation Check for Price Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 NTE128 vs KSD471A
BC142 Micro Electronics Ltd Check for Price Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN NTE128 vs BC142
BC269 Micro Electronics Corporation Check for Price Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN NTE128 vs BC269
BC142 STMicroelectronics Check for Price 1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 NTE128 vs BC142
BC267 Micro Electronics Corporation Check for Price Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN NTE128 vs BC267
BC268 Micro Electronics Corporation Check for Price Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN NTE128 vs BC268

NTE128 Related Parts

NTE128 Frequently Asked Questions (FAQ)

  • The maximum safe operating temperature for the NTE128 is 150°C, as specified in the datasheet. However, it's recommended to operate the transistor within a temperature range of 25°C to 125°C for optimal performance and reliability.

  • While the NTE128 can be used as a switch, it's not recommended for high-frequency circuits due to its relatively high transition frequency (fT) of 30 MHz. For high-frequency applications, a transistor with a higher fT is recommended.

  • To ensure proper biasing for linear amplifier applications, follow these steps: 1) Choose a suitable collector-emitter voltage (Vce) and collector current (Ic) based on the application requirements. 2) Select a suitable base-emitter voltage (Vbe) and base current (Ib) to achieve the desired quiescent point. 3) Use a voltage divider or other biasing network to establish the desired Vbe and Ib. 4) Verify the transistor's operating point using a load line analysis or simulation tools.

  • The maximum collector current (Ic) that the NTE128 can handle is 1 A, as specified in the datasheet. However, it's recommended to operate the transistor within a safe operating area (SOA) to ensure reliability and prevent thermal runaway.

  • Yes, the NTE128 can be used in a push-pull amplifier configuration. However, it's essential to ensure that the transistors are properly matched and biased to minimize distortion and ensure optimal performance.