Datasheets
NTD3055L170T4 by:
onsemi
onsemi
Rochester Electronics LLC
Not Found

9A, 60V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3

Part Details for NTD3055L170T4 by onsemi

Results Overview of NTD3055L170T4 by onsemi

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NTD3055L170T4 Information

NTD3055L170T4 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for NTD3055L170T4

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NTD3055L170T4 Part Data Attributes

NTD3055L170T4 onsemi
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NTD3055L170T4 onsemi 9A, 60V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code CASE 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 30 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 27 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTD3055L170T4

This table gives cross-reference parts and alternative options found for NTD3055L170T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD3055L170T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NVD3055L170T4G-VF01 onsemi Check for Price N-Channel Power Logic Level MOSFET 60V, 9A, 170mΩ, DPAK-3, 2500-REEL, Automotive Qualified NTD3055L170T4 vs NVD3055L170T4G-VF01
NTD3055L170T4G onsemi Check for Price Single N-Channel Logic Level Power MOSFET 60V, 9A, 170mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL NTD3055L170T4 vs NTD3055L170T4G
NTD3055L170G onsemi Check for Price Single N-Channel Logic Level Power MOSFET 60V, 9A, 170mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE NTD3055L170T4 vs NTD3055L170G
NTD3055L170 onsemi Check for Price TRANSISTOR 9 A, 60 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3, FET General Purpose Power NTD3055L170T4 vs NTD3055L170

NTD3055L170T4 Related Parts

NTD3055L170T4 Frequently Asked Questions (FAQ)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material. Additionally, verify that the device is operated within the specified maximum junction temperature (Tj) of 150°C.

  • The NTD3055L170T4 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended for ESD protection.

  • Yes, the NTD3055L170T4 is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended qualification and testing procedures, and to consult with onsemi's application engineers for specific guidance.

  • Troubleshooting issues related to the internal compensation network typically involves analyzing the device's frequency response, checking for oscillations, and verifying the stability of the output voltage. Consult onsemi's application notes and technical support resources for more detailed guidance.