Datasheets
NTD18N06T4 by:
onsemi
onsemi
Rochester Electronics LLC
Not Found

TRANSISTOR 18 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3, FET General Purpose Power

Part Details for NTD18N06T4 by onsemi

Results Overview of NTD18N06T4 by onsemi

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NTD18N06T4 Information

NTD18N06T4 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTD18N06T4

Part # Distributor Description Stock Price Buy
Bristol Electronics   24
RFQ

Part Details for NTD18N06T4

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NTD18N06T4 Part Data Attributes

NTD18N06T4 onsemi
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NTD18N06T4 onsemi TRANSISTOR 18 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3, FET General Purpose Power
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code CASE 369C-01
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 72 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 54 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTD18N06T4

This table gives cross-reference parts and alternative options found for NTD18N06T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD18N06T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NTD18N06 onsemi Check for Price 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 NTD18N06T4 vs NTD18N06
NTD18N06T4G Rochester Electronics LLC Check for Price 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 NTD18N06T4 vs NTD18N06T4G
Part Number Manufacturer Composite Price Description Compare
MTD2N40E-T4 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NTD18N06T4 vs MTD2N40E-T4
BUZ71L Siemens Check for Price Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB NTD18N06T4 vs BUZ71L
HUF75329D3S_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, NTD18N06T4 vs HUF75329D3S_NL
HUF75309D3ST Intersil Corporation Check for Price 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA NTD18N06T4 vs HUF75309D3ST
PHD20N06T,118 Nexperia Check for Price PHD20N06T - N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin NTD18N06T4 vs PHD20N06T,118
BUK7277-55A,118 Nexperia Check for Price N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin NTD18N06T4 vs BUK7277-55A,118
HUFA76409D3 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, NTD18N06T4 vs HUFA76409D3
BUZ10 STMicroelectronics Check for Price 23A, 50V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN NTD18N06T4 vs BUZ10
MTD15N06VL-1 onsemi Check for Price 15A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 NTD18N06T4 vs MTD15N06VL-1
MTP15N06V onsemi Check for Price 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN NTD18N06T4 vs MTP15N06V

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