Part Details for NTB8N50T4 by onsemi
Overview of NTB8N50T4 by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NTB8N50T4
NTB8N50T4 CAD Models
NTB8N50T4 Part Data Attributes
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NTB8N50T4
onsemi
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Datasheet
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NTB8N50T4
onsemi
8A, 500V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.75 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 202 W | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NTB8N50T4
This table gives cross-reference parts and alternative options found for NTB8N50T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB8N50T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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NTB8N50 | Rochester Electronics LLC | Check for Price | 8A, 500V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | NTB8N50T4 vs NTB8N50 |
NTB8N50T4 | Motorola Mobility LLC | Check for Price | 8A, 500V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | NTB8N50T4 vs NTB8N50T4 |
NTB8N50 | onsemi | Check for Price | 8A, 500V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | NTB8N50T4 vs NTB8N50 |
NTB8N50 | Motorola Mobility LLC | Check for Price | 8A, 500V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | NTB8N50T4 vs NTB8N50 |
IRFW840B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | NTB8N50T4 vs IRFW840B |
IRFW840BTM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | NTB8N50T4 vs IRFW840BTM |