Part Details for NTB6410ANT4G by onsemi
Overview of NTB6410ANT4G by onsemi
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTB6410ANT4G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
71R6713
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Newark | Mosfet Transistor, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:76A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Product Range:- Rohs Compliant: Yes |Onsemi NTB6410ANT4G RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.3800 / $1.7600 | Buy Now |
DISTI #
50AC6476
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Newark | Mosfet, N-Ch, 100V, 76A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:76A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.011Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipationrohs Compliant: Yes |Onsemi NTB6410ANT4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.6100 / $3.1400 | Buy Now |
DISTI #
NTB6410ANT4GOSCT-ND
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DigiKey | MOSFET N-CH 100V 76A D2PAK Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1444 In Stock |
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$1.3985 / $3.3200 | Buy Now |
DISTI #
NTB6410ANT4G
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Avnet Americas | Trans MOSFET N-CH 100V 76A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NTB6410ANT4G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$1.3162 / $1.3916 | Buy Now |
DISTI #
863-NTB6410ANT4G
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Mouser Electronics | MOSFETs NFET D2PAK 100V 76A 13MOH RoHS: Compliant | 573 |
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$1.3900 / $3.2100 | Buy Now |
DISTI #
V72:2272_07301028
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Arrow Electronics | Trans MOSFET N-CH 100V 76A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks Date Code: 2424 Container: Cut Strips | Americas - 750 |
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$1.4350 / $2.8320 | Buy Now |
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Future Electronics | NTB6410AN Series 100 V 76 A 0.013 Ohms N-Channel Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks Container: Reel |
0 Reel |
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$1.3100 / $1.3600 | Buy Now |
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Onlinecomponents.com | NTB6410AN Series 100 V 76 A 0.013 Ohms N-Channel Power Mosfet - D2PAK-3 RoHS: Compliant | 0 |
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$1.3600 / $1.6000 | Buy Now |
DISTI #
82698940
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Verical | Trans MOSFET N-CH 100V 76A 3-Pin(2+Tab) D2PAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2424 | Americas - 750 |
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$1.4350 / $2.8320 | Buy Now |
DISTI #
NTB6410ANT4G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 | 0 |
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$1.4000 | Buy Now |
Part Details for NTB6410ANT4G
NTB6410ANT4G CAD Models
NTB6410ANT4G Part Data Attributes
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NTB6410ANT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTB6410ANT4G
onsemi
Single N-Channel Power MOSFET 100V, 76A, 13 mΩ, D2PAK 2 LEAD, 800-REEL
Select a part to compare: |
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | D2PAK 2 LEAD | |
Package Description | D2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 418B-04 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 76 A | |
Drain-source On Resistance-Max | 0.013 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 188 W | |
Pulsed Drain Current-Max (IDM) | 305 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
Alternate Parts for NTB6410ANT4G
This table gives cross-reference parts and alternative options found for NTB6410ANT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB6410ANT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFB4610TRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | NTB6410ANT4G vs IRFB4610TRR |
IRFS4610 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | NTB6410ANT4G vs IRFS4610 |
IRFS4610PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | NTB6410ANT4G vs IRFS4610PBF |
IRFP4710PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | NTB6410ANT4G vs IRFP4710PBF |
IXFT75N10Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, D3PAK-3 | NTB6410ANT4G vs IXFT75N10Q |
IRFB4610TRL | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | NTB6410ANT4G vs IRFB4610TRL |
IRFB4610 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | NTB6410ANT4G vs IRFB4610 |
APT10M19BVR | Microchip Technology Inc | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NTB6410ANT4G vs APT10M19BVR |
IRFB4610PBF | Infineon Technologies AG | $1.0348 | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | NTB6410ANT4G vs IRFB4610PBF |
IRFSL4610TRLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | NTB6410ANT4G vs IRFSL4610TRLPBF |