Part Details for NTB23N03RT4G by onsemi
Overview of NTB23N03RT4G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTB23N03RT4G
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
74AK0727
|
Newark | Ntb23N03Rt4G, Single Mosfets |Onsemi NTB23N03RT4G Min Qty: 1460 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.2250 / $0.2860 | Buy Now |
|
Rochester Electronics | NTB23N03R - 6A, 25V, 0.06ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 11894 |
|
$0.1241 / $0.1460 | Buy Now |
Part Details for NTB23N03RT4G
NTB23N03RT4G CAD Models
NTB23N03RT4G Part Data Attributes:
|
NTB23N03RT4G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NTB23N03RT4G
onsemi
Power MOSFET 25V 23A 45 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | D2PAK 2 LEAD | |
Package Description | D2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 418B-04 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 37.5 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |