Part Details for NT5DS4M32EF-25 by Nanya Technology Corporation
Overview of NT5DS4M32EF-25 by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Consumer Electronics
Computing and Data Storage
Part Details for NT5DS4M32EF-25
NT5DS4M32EF-25 CAD Models
NT5DS4M32EF-25 Part Data Attributes
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NT5DS4M32EF-25
Nanya Technology Corporation
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Datasheet
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NT5DS4M32EF-25
Nanya Technology Corporation
DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | BGA | |
| Package Description | LFBGA, BGA144,12X12,32 | |
| Pin Count | 144 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | S-PBGA-B144 | |
| Length | 12 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 144 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LFBGA | |
| Package Equivalence Code | BGA144,12X12,32 | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.4 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8,FP | |
| Standby Current-Max | 0.023 A | |
| Supply Current-Max | 0.77 mA | |
| Supply Voltage-Max (Vsup) | 2.625 V | |
| Supply Voltage-Min (Vsup) | 2.375 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 12 mm |
Alternate Parts for NT5DS4M32EF-25
This table gives cross-reference parts and alternative options found for NT5DS4M32EF-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5DS4M32EF-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4D263238E-GC360 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | NT5DS4M32EF-25 vs K4D263238E-GC360 |
| NT5DS4M32EF-28 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Nanya Technology Corporation | NT5DS4M32EF-25 vs NT5DS4M32EF-28 |
| HY5DW283222AF-36 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, FBGA-144 | SK Hynix Inc | NT5DS4M32EF-25 vs HY5DW283222AF-36 |
| NT5DS4M32EF-4 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Nanya Technology Corporation | NT5DS4M32EF-25 vs NT5DS4M32EF-4 |
| HY5DW283222AF-25 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, FBGA-144 | SK Hynix Inc | NT5DS4M32EF-25 vs HY5DW283222AF-25 |
| K4D263238I-GC400 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | NT5DS4M32EF-25 vs K4D263238I-GC400 |
| NT5DS4M32EG-33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Nanya Technology Corporation | NT5DS4M32EF-25 vs NT5DS4M32EG-33 |
| HY5DW283222AF-33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, FBGA-144 | SK Hynix Inc | NT5DS4M32EF-25 vs HY5DW283222AF-33 |
| K4D263238G-GC360 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | NT5DS4M32EF-25 vs K4D263238G-GC360 |
| K4D263238E-GL360 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | NT5DS4M32EF-25 vs K4D263238E-GL360 |