Part Details for NT5DS32M16BG-6KI by Nanya Technology Corporation
Overview of NT5DS32M16BG-6KI by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for NT5DS32M16BG-6KI
NT5DS32M16BG-6KI CAD Models
NT5DS32M16BG-6KI Part Data Attributes
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NT5DS32M16BG-6KI
Nanya Technology Corporation
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Datasheet
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NT5DS32M16BG-6KI
Nanya Technology Corporation
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 1 MM PITCH, WBGA-60
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | BGA | |
| Package Description | TBGA, BGA60,9X12,40/32 | |
| Pin Count | 60 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| Length | 12 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TBGA | |
| Package Equivalence Code | BGA60,9X12,40/32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.3 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10 mm |
Alternate Parts for NT5DS32M16BG-6KI
This table gives cross-reference parts and alternative options found for NT5DS32M16BG-6KI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5DS32M16BG-6KI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H511638D-ZPB3 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | NT5DS32M16BG-6KI vs K4H511638D-ZPB3 |
| K4H511638D-ZIB3T | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | NT5DS32M16BG-6KI vs K4H511638D-ZIB3T |
| MT46V32M16BN-6LIT:F | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | NT5DS32M16BG-6KI vs MT46V32M16BN-6LIT:F |
| K4H511638J-BPB3T | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | NT5DS32M16BG-6KI vs K4H511638J-BPB3T |
| K4H511638J-BPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | NT5DS32M16BG-6KI vs K4H511638J-BPB30 |
| K4H511638D-ZIB3 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | NT5DS32M16BG-6KI vs K4H511638D-ZIB3 |
| K4H511638D-ZPB3T | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | Samsung Semiconductor | NT5DS32M16BG-6KI vs K4H511638D-ZPB3T |
| H5DU5162EFR-J3J | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | NT5DS32M16BG-6KI vs H5DU5162EFR-J3J |
| K4H511638C-ZPB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | NT5DS32M16BG-6KI vs K4H511638C-ZPB30 |
| K4H511638D-ZIB30 | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | NT5DS32M16BG-6KI vs K4H511638D-ZIB30 |