Part Details for NT5DS16M16BT-6K by Nanya Technology Corporation
Overview of NT5DS16M16BT-6K by Nanya Technology Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for NT5DS16M16BT-6K
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 | 320 |
|
Buy Now |
Part Details for NT5DS16M16BT-6K
NT5DS16M16BT-6K CAD Models
NT5DS16M16BT-6K Part Data Attributes
|
|
NT5DS16M16BT-6K
Nanya Technology Corporation
Buy Now
Datasheet
|
Compare Parts:
NT5DS16M16BT-6K
Nanya Technology Corporation
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for NT5DS16M16BT-6K
This table gives cross-reference parts and alternative options found for NT5DS16M16BT-6K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5DS16M16BT-6K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V16M16TG-6TES:C | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | NT5DS16M16BT-6K vs MT46V16M16TG-6TES:C |
| HY5DU561622FTP-5I | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | SK Hynix Inc | NT5DS16M16BT-6K vs HY5DU561622FTP-5I |
| HYB25DC256160CE-6 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Qimonda AG | NT5DS16M16BT-6K vs HYB25DC256160CE-6 |
| N2DS25H16BS-6K | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, TSOP2-66 | Nanya Technology Corporation | NT5DS16M16BT-6K vs N2DS25H16BS-6K |
| HY5DU561622ETP-J | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | SK Hynix Inc | NT5DS16M16BT-6K vs HY5DU561622ETP-J |
| W9425G6DH-4 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Winbond Electronics Corp | NT5DS16M16BT-6K vs W9425G6DH-4 |
| K4H561638F-TLB30 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | NT5DS16M16BT-6K vs K4H561638F-TLB30 |
| HY5DU561622CTP-5 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | SK Hynix Inc | NT5DS16M16BT-6K vs HY5DU561622CTP-5 |
| HYB25D256160CE-6 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Infineon Technologies AG | NT5DS16M16BT-6K vs HYB25D256160CE-6 |
| K4H561638F-ULB30 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | NT5DS16M16BT-6K vs K4H561638F-ULB30 |