Datasheets
NT256D64SH8B0GM-75B by: Nanya Technology Corporation

DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200

Part Details for NT256D64SH8B0GM-75B by Nanya Technology Corporation

Overview of NT256D64SH8B0GM-75B by Nanya Technology Corporation

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Part Details for NT256D64SH8B0GM-75B

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NT256D64SH8B0GM-75B Part Data Attributes:

NT256D64SH8B0GM-75B Nanya Technology Corporation
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NT256D64SH8B0GM-75B Nanya Technology Corporation DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NANYA TECHNOLOGY CORP
Part Package Code MODULE
Package Description DIMM, DIMM200,24
Pin Count 200
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode DUAL BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N200
JESD-609 Code e4
Memory Density 2147483648 bit
Memory IC Type DDR DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 200
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Standby Current-Max 0.18 A
Supply Current-Max 2.065 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL

Alternate Parts for NT256D64SH8B0GM-75B

This table gives cross-reference parts and alternative options found for NT256D64SH8B0GM-75B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT256D64SH8B0GM-75B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NT256D64SH8BAGM-75B DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200 Nanya Technology Corporation NT256D64SH8B0GM-75B vs NT256D64SH8BAGM-75B
NT256D64SH8B0GN-75B DDR DRAM Module, 32MX64, 0.75ns, CMOS, LEAD FREE, SODIMM-200 Nanya Technology Corporation NT256D64SH8B0GM-75B vs NT256D64SH8B0GN-75B
Part Number Description Manufacturer Compare
WED3EG6433S262D3 DDR DRAM Module, 32MX64, CMOS, DIMM-184 Microsemi Corporation NT256D64SH8B0GM-75B vs WED3EG6433S262D3
M470T3354BG0-CCC DDR DRAM Module, 32MX64, 0.6ns, CMOS, SODIMM-200 Samsung Semiconductor NT256D64SH8B0GM-75B vs M470T3354BG0-CCC
M470T3354CZ0-CE7 DDR DRAM Module, 32MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor NT256D64SH8B0GM-75B vs M470T3354CZ0-CE7
HYMD232646C8J-D4 DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184 SK Hynix Inc NT256D64SH8B0GM-75B vs HYMD232646C8J-D4
M470L3223BT0-LA0 DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200 Samsung Semiconductor NT256D64SH8B0GM-75B vs M470L3223BT0-LA0
M470L3324BT0-LA2 DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200 Samsung Semiconductor NT256D64SH8B0GM-75B vs M470L3324BT0-LA2
M368L3223DTM-CB3 DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184 Samsung Semiconductor NT256D64SH8B0GM-75B vs M368L3223DTM-CB3
HYMD5326466-L DDR DRAM Module, 32MX64, 0.8ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 SK Hynix Inc NT256D64SH8B0GM-75B vs HYMD5326466-L
HYMD132645BL8J-J DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184 SK Hynix Inc NT256D64SH8B0GM-75B vs HYMD132645BL8J-J
HYMD232M646CLF6-J DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200 SK Hynix Inc NT256D64SH8B0GM-75B vs HYMD232M646CLF6-J

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