Datasheets
NT256D64S88AAG-6 by: Nanya Technology Corporation

DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184

Part Details for NT256D64S88AAG-6 by Nanya Technology Corporation

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Part Details for NT256D64S88AAG-6

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NT256D64S88AAG-6 Part Data Attributes:

NT256D64S88AAG-6 Nanya Technology Corporation
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NT256D64S88AAG-6 Nanya Technology Corporation DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184
Part Life Cycle Code Obsolete
Ihs Manufacturer NANYA TECHNOLOGY CORP
Part Package Code DIMM
Package Description ,
Pin Count 184
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N184
Memory Density 2147483648 bit
Memory IC Type DDR DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 184
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX64
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Position DUAL

Alternate Parts for NT256D64S88AAG-6

This table gives cross-reference parts and alternative options found for NT256D64S88AAG-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT256D64S88AAG-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
WED3EG6433S262D3 DDR DRAM Module, 32MX64, CMOS, DIMM-184 Microsemi Corporation NT256D64S88AAG-6 vs WED3EG6433S262D3
M470T3354BG0-CCC DDR DRAM Module, 32MX64, 0.6ns, CMOS, SODIMM-200 Samsung Semiconductor NT256D64S88AAG-6 vs M470T3354BG0-CCC
M470T3354CZ0-CE7 DDR DRAM Module, 32MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor NT256D64S88AAG-6 vs M470T3354CZ0-CE7
HYMD232646C8J-D4 DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184 SK Hynix Inc NT256D64S88AAG-6 vs HYMD232646C8J-D4
M470L3223BT0-LA0 DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200 Samsung Semiconductor NT256D64S88AAG-6 vs M470L3223BT0-LA0
M470L3324BT0-LA2 DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200 Samsung Semiconductor NT256D64S88AAG-6 vs M470L3324BT0-LA2
M368L3223DTM-CB3 DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184 Samsung Semiconductor NT256D64S88AAG-6 vs M368L3223DTM-CB3
HYMD5326466-L DDR DRAM Module, 32MX64, 0.8ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 SK Hynix Inc NT256D64S88AAG-6 vs HYMD5326466-L
HYMD132645BL8J-J DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184 SK Hynix Inc NT256D64S88AAG-6 vs HYMD132645BL8J-J
HYMD232M646CLF6-J DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200 SK Hynix Inc NT256D64S88AAG-6 vs HYMD232M646CLF6-J

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