Part Details for NT128D64SH4B0GN-6K by Nanya Technology Corporation
Overview of NT128D64SH4B0GN-6K by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for NT128D64SH4B0GN-6K
NT128D64SH4B0GN-6K CAD Models
NT128D64SH4B0GN-6K Part Data Attributes
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NT128D64SH4B0GN-6K
Nanya Technology Corporation
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Datasheet
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NT128D64SH4B0GN-6K
Nanya Technology Corporation
DDR DRAM Module, 16MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | MODULE | |
| Package Description | DIMM, DIMM200,24 | |
| Pin Count | 200 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Category CO2 Kg | 12 | |
| Compliance Temperature Grade | Commercial: +0C to +70C | |
| EU RoHS Version | RoHS 2 (2011/65/EU) | |
| Candidate List Date | 2014-06-16 | |
| Conflict Mineral Status | DRC Conflict Free | |
| Conflict Mineral Status Source | Conflict Minerals Declaration | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N200 | |
| JESD-609 Code | e4 | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Supply Current-Max | 1.3 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.6 mm | |
| Terminal Position | DUAL |
Alternate Parts for NT128D64SH4B0GN-6K
This table gives cross-reference parts and alternative options found for NT128D64SH4B0GN-6K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT128D64SH4B0GN-6K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NT128D64SH4BBGM-6K | DDR DRAM Module, 16MX64, 0.7ns, CMOS, SODIMM-200 | Nanya Technology Corporation | NT128D64SH4B0GN-6K vs NT128D64SH4BBGM-6K |
| HYMD216M646C6-J | DDR DRAM Module, 16MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | NT128D64SH4B0GN-6K vs HYMD216M646C6-J |
| HYMD216M646DL6-J | DDR DRAM Module, 16MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | NT128D64SH4B0GN-6K vs HYMD216M646DL6-J |
| V826616B24SCIX-C0 | Cache DRAM Module, 16MX64, 0.7ns, CMOS, PDMA200 | ProMOS Technologies Inc | NT128D64SH4B0GN-6K vs V826616B24SCIX-C0 |
| HYMD216M646CL6-J | DDR DRAM Module, 16MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | NT128D64SH4B0GN-6K vs HYMD216M646CL6-J |
| V826616B24SCIW-C0 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, GREEN, SODIMM-200 | ProMOS Technologies Inc | NT128D64SH4B0GN-6K vs V826616B24SCIW-C0 |
| HYMD216M646AL6-J | DDR DRAM Module, 16MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | NT128D64SH4B0GN-6K vs HYMD216M646AL6-J |
| M470L1624FU0-LB3 | DDR DRAM Module, 16MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | NT128D64SH4B0GN-6K vs M470L1624FU0-LB3 |
| M470L1624DT0-CB3 | DDR DRAM Module, 16MX64, 0.7ns, CMOS, SODIMM-200 | Samsung Semiconductor | NT128D64SH4B0GN-6K vs M470L1624DT0-CB3 |
| NT128D64SH4BAGM-6K | DDR DRAM Module, 16MX64, 0.7ns, CMOS, SODIMM-200 | Nanya Technology Corporation | NT128D64SH4B0GN-6K vs NT128D64SH4BAGM-6K |