Part Details for NSVMUN5211DW1T2G by onsemi
Overview of NSVMUN5211DW1T2G by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NSVMUN5211DW1T2G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31AC1003
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Newark | Dual Npn Bipolar Digital Transistor (Brt)/ Reel |Onsemi NSVMUN5211DW1T2G RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.0340 / $0.0370 | Buy Now |
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DISTI #
NSVMUN5211DW1T2GOSCT-ND
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DigiKey | TRANS PREBIAS 2NPN 50V SC88 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
11757 In Stock |
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$0.0320 / $0.1900 | Buy Now |
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DISTI #
NSVMUN5211DW1T2G
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Avnet Americas | Transistor Digital BJT NPN 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSVMUN5211DW1T2G) RoHS: Compliant Min Qty: 21000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.0325 / $0.0348 | Buy Now |
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DISTI #
NSVMUN5211DW1T2G
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Avnet Americas | Transistor Digital BJT NPN 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSVMUN5211DW1T2G) RoHS: Compliant Min Qty: 21000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.0325 / $0.0348 | Buy Now |
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DISTI #
863-NSVMUN5211DW1T2G
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Mouser Electronics | Digital Transistors Dual NPN Bipolar Digital Transistor (BRT) RoHS: Compliant | 7522 |
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$0.0370 / $0.1900 | Buy Now |
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Onlinecomponents.com | Trans Digital BJT NPN 50V 100mA 385mW Automotive 6-Pin SC-88 T/R | 0 |
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$0.0307 / $0.0366 | Buy Now |
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Rochester Electronics | MUN5211DW1 - Small Signal Bipolar Transistor RoHS: Compliant Status: Active Min Qty: 1 | 1413 |
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$0.0303 / $0.0356 | Buy Now |
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DISTI #
NSVMUN5211DW1T2G
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Avnet Silica | Transistor Digital BJT NPN 100mA 6-Pin SOT-363 T/R (Alt: NSVMUN5211DW1T2G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NSVMUN5211DW1T2G
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EBV Elektronik | Transistor Digital BJT NPN 100mA 6-Pin SOT-363 T/R (Alt: NSVMUN5211DW1T2G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
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LCSC | 355mA10V 385mW 100mA 50V SOT-363 Digital Transistors ROHS | 27 |
|
$0.0967 / $0.1024 | Buy Now |
Part Details for NSVMUN5211DW1T2G
NSVMUN5211DW1T2G CAD Models
NSVMUN5211DW1T2G Part Data Attributes
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NSVMUN5211DW1T2G
onsemi
Buy Now
Datasheet
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Compare Parts:
NSVMUN5211DW1T2G
onsemi
Dual NPN Bipolar Digital Transistor (BRT), SC-88-6 / SC-70-6 / SOT-363-6, 3000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SC-88-6 / SC-70-6 / SOT-363-6 | |
| Manufacturer Package Code | 419B-02 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | BUILT IN BAIS RESISTOR RATIO IS 1 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 35 | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.385 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 0.25 V |