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Part Details for NSVMMBT5550LT1G by onsemi
Overview of NSVMMBT5550LT1G by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NSVMMBT5550LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
91AH8438
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Newark | High Voltage Npn Bipolar Transistor/ Reel |Onsemi NSVMMBT5550LT1G RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.0450 / $0.0580 | Buy Now |
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DISTI #
488-NSVMMBT5550LT1GCT-ND
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DigiKey | TRANS NPN 140V 0.6A SOT23-3 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5575 In Stock |
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$0.0430 / $0.2300 | Buy Now |
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DISTI #
NSVMMBT5550LT1G
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Avnet Americas | Transistor GP BJT NPN 140V 600mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: NSVMMBT5550LT1G) RoHS: Compliant Min Qty: 12500 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 27520 Partner Stock |
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$0.0508 / $0.0544 | Buy Now |
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DISTI #
NSVMMBT5550LT1G
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Avnet Americas | Transistor GP BJT NPN 140V 600mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: NSVMMBT5550LT1G) RoHS: Compliant Min Qty: 15000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.0437 / $0.0468 | Buy Now |
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DISTI #
863-NSVMMBT5550LT1G
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Mouser Electronics | Bipolar Transistors - BJT High Voltage NPN Bipolar Transistor RoHS: Compliant | 41222 |
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$0.0430 / $0.2300 | Buy Now |
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Onlinecomponents.com | High Voltage NPN Bipolar Transistor | 0 |
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$0.0418 / $0.0471 | Buy Now |
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Rochester Electronics | MMBT5550L - Small Signal Bipolar Transistor RoHS: Compliant Status: Active Min Qty: 1 | 27000 |
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$0.0406 / $0.0478 | Buy Now |
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DISTI #
NSVMMBT5550LT1G
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Avnet Silica | Transistor GP BJT NPN 140V 600mA 3-Pin SOT-23 T/R (Alt: NSVMMBT5550LT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NSVMMBT5550LT1G
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EBV Elektronik | Transistor GP BJT NPN 140V 600mA 3-Pin SOT-23 T/R (Alt: NSVMMBT5550LT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 27520 |
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RFQ |
Part Details for NSVMMBT5550LT1G
NSVMMBT5550LT1G CAD Models
NSVMMBT5550LT1G Part Data Attributes
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NSVMMBT5550LT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NSVMMBT5550LT1G
onsemi
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | |
| Package Description | SOT-23, 3 PIN | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Date Of Intro | 2020-05-12 | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 140 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 0.25 V |