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Low VCE(sat) Transistor, NPN, 60 V, 6.0 A, SOT-223 (TO-261) 4 LEAD, 1000-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NSV60601MZ4T1G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31AC1012
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Newark | Transistor, Aec-Q101, Npn, 60V, Sot-223, Transistor Polarity:Npn, Collector Emitter Voltage Max:60... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5726 |
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$0.3120 / $0.7700 | Buy Now |
DISTI #
76T6732
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Newark | Low VCe(Sat) Transistor, Npn, 60 V, 6.0 A/ Reel Rohs Compliant: Yes |Onsemi NSV60601MZ4T1G RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2040 / $0.2720 | Buy Now |
DISTI #
NSV60601MZ4T1GOSCT-ND
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DigiKey | TRANS NPN 60V 6A SOT223 Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1453 In Stock |
|
$0.1976 / $0.9900 | Buy Now |
DISTI #
NSV60601MZ4T1G
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Avnet Americas | Trans GP BJT NPN 60V 6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NSV60601MZ4T1G) RoHS: Compliant Min Qty: 4000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 267393 Factory Stock |
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RFQ | |
DISTI #
863-NSV60601MZ4T1G
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Mouser Electronics | Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT) RoHS: Compliant | 160380 |
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$0.2330 / $0.8600 | Buy Now |
DISTI #
70341277
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RS | ON Semi NSV60601MZ4T1G NPN Bipolar Transistor, 6 A, 60 V SOT-223 | ON Semiconductor NSV60601MZ4T1G RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.3800 / $0.4470 | RFQ |
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Onlinecomponents.com | Low VCE(sat) Transistor, NPN, 60 V, 6.0 A RoHS: Compliant | 0 |
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$0.1908 / $0.2166 | Buy Now |
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Bristol Electronics | 12500 |
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RFQ | ||
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Rochester Electronics | NSS60601MZ4 - Low VCE(sat) Transistor, NPN, 60 V, 6.0 A RoHS: Not Compliant Status: Active Min Qty: 1 | Call for Availability |
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$0.1867 / $0.2196 | Buy Now |
DISTI #
NSV60601MZ4T1G
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Avnet Silica | Trans GP BJT NPN 60V 6A 4Pin3Tab SOT223 TR (Alt: NSV60601MZ4T1G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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NSV60601MZ4T1G
onsemi
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Datasheet
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Compare Parts:
NSV60601MZ4T1G
onsemi
Low VCE(sat) Transistor, NPN, 60 V, 6.0 A, SOT-223 (TO-261) 4 LEAD, 1000-REEL, Automotive Qualified
Select a part to compare: |
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-223 (TO-261) 4 LEAD | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, 318E-04, TO-261, 4 PIN | |
Pin Count | 4 | |
Manufacturer Package Code | 0.0318 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 6 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 50 | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 2 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz | |
Turn-off Time-Max (toff) | 1475 ns | |
Turn-on Time-Max (ton) | 200 ns |