Part Details for NP83P06PDG by NEC Electronics Group
Overview of NP83P06PDG by NEC Electronics Group
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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NP83P06PDG-E2-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
NP83P06PDG-E1-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive |
Part Details for NP83P06PDG
NP83P06PDG CAD Models
NP83P06PDG Part Data Attributes
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NP83P06PDG
NEC Electronics Group
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NP83P06PDG
NEC Electronics Group
Power Field-Effect Transistor, 83A I(D), 60V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZP, TO-263, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEC ELECTRONICS CORP | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 240 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 83 A | |
Drain-source On Resistance-Max | 0.012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 249 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |