Part Details for NP82N06MLG-S18-AY by Renesas Electronics Corporation
Overview of NP82N06MLG-S18-AY by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| NP82N06MLG-S18-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive |
Part Details for NP82N06MLG-S18-AY
NP82N06MLG-S18-AY CAD Models
NP82N06MLG-S18-AY Part Data Attributes
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NP82N06MLG-S18-AY
Renesas Electronics Corporation
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Datasheet
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NP82N06MLG-S18-AY
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25K, /Tube
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | MP-25K | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | PRSS0004AN-A3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Renesas Electronics | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 82 A | |
| Drain-source On Resistance-Max | 0.0097 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 143 W | |
| Pulsed Drain Current-Max (IDM) | 270 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NP82N06MLG-S18-AY
This table gives cross-reference parts and alternative options found for NP82N06MLG-S18-AY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NP82N06MLG-S18-AY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDB7052LL86Z | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | NP82N06MLG-S18-AY vs NDB7052LL86Z |
| FDB5645L86Z | Power Field-Effect Transistor, 80A I(D), 60V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | NP82N06MLG-S18-AY vs FDB5645L86Z |
| HUF75343P3_NL | Power Field-Effect Transistor, 75A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | NP82N06MLG-S18-AY vs HUF75343P3_NL |
| NDB7050LL86Z | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | NP82N06MLG-S18-AY vs NDB7050LL86Z |
| NDB7052LL99Z | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | NP82N06MLG-S18-AY vs NDB7052LL99Z |
| IPB80N06S2L07XT | Power Field-Effect Transistor, 80A I(D), 55V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | NP82N06MLG-S18-AY vs IPB80N06S2L07XT |
| NP82N06NLG-S18-AY | Power MOSFETs for Automotive, MP-25SK, /Tube | Renesas Electronics Corporation | NP82N06MLG-S18-AY vs NP82N06NLG-S18-AY |