Part Details for NP80N055KHE by Renesas Electronics Corporation
Results Overview of NP80N055KHE by Renesas Electronics Corporation
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NP80N055KHE Information
NP80N055KHE by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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NP80N055KHE-E1-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive |
Part Details for NP80N055KHE
NP80N055KHE CAD Models
NP80N055KHE Part Data Attributes
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NP80N055KHE
Renesas Electronics Corporation
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NP80N055KHE
Renesas Electronics Corporation
80 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | D2PAK | |
Package Description | MP-25ZK, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 120 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |