Datasheets
NP80N055KHE by:
Renesas Electronics Corporation
Hongxing Electrical Ltd
NEC Electronics Group
Renesas Electronics Corporation
Not Found

80 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN

Part Details for NP80N055KHE by Renesas Electronics Corporation

Results Overview of NP80N055KHE by Renesas Electronics Corporation

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Applications Industrial Automation Automotive Motor control systems

NP80N055KHE Information

NP80N055KHE by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
NP80N055KHE-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive

Part Details for NP80N055KHE

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NP80N055KHE Part Data Attributes

NP80N055KHE Renesas Electronics Corporation
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NP80N055KHE Renesas Electronics Corporation 80 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code D2PAK
Package Description MP-25ZK, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 120 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON