Datasheets
NP80N04PDG-E1B-AY by: Renesas Electronics Corporation

Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape

Part Details for NP80N04PDG-E1B-AY by Renesas Electronics Corporation

Overview of NP80N04PDG-E1B-AY by Renesas Electronics Corporation

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Available Datasheets

Part # Manufacturer Description Datasheet
NP80N04PDG-E1B-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape
NP80N04PDG-E2B-AY Renesas Electronics Corporation Power MOSFETs for Automotive

Price & Stock for NP80N04PDG-E1B-AY

Part # Distributor Description Stock Price Buy
Rochester Electronics NP80N04 - Power Field-Effect Transistor, 80A, 40V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 1000
  • 1 $1.9200
  • 25 $1.8800
  • 100 $1.8000
  • 500 $1.7300
  • 1,000 $1.6300
$1.6300 / $1.9200 Buy Now

Part Details for NP80N04PDG-E1B-AY

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NP80N04PDG-E1B-AY Part Data Attributes

NP80N04PDG-E1B-AY Renesas Electronics Corporation
Buy Now Datasheet
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NP80N04PDG-E1B-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code MP-25ZP
Package Description LEAD FREE, MP-25ZP, TO-263, 3 PIN
Pin Count 3
Manufacturer Package Code PRSS0004AL-A3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Renesas Electronics
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 115 W
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NP80N04PDG-E1B-AY

This table gives cross-reference parts and alternative options found for NP80N04PDG-E1B-AY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NP80N04PDG-E1B-AY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NP80N04MDG-S18-AY Power MOSFETs for Automotive, MP-25K, /Tube Renesas Electronics Corporation NP80N04PDG-E1B-AY vs NP80N04MDG-S18-AY
NP80N04PLG-E2B-AY Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape Renesas Electronics Corporation NP80N04PDG-E1B-AY vs NP80N04PLG-E2B-AY
NP80N04PLG-E1B-AY Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape Renesas Electronics Corporation NP80N04PDG-E1B-AY vs NP80N04PLG-E1B-AY
NP80N04PUG-E1B-AY Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape Renesas Electronics Corporation NP80N04PDG-E1B-AY vs NP80N04PUG-E1B-AY
FDB8442 40V N-Channel PowerTrench® MOSFET, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL Fairchild Semiconductor Corporation NP80N04PDG-E1B-AY vs FDB8442
IPB039N04LG Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG NP80N04PDG-E1B-AY vs IPB039N04LG
NP80N04NDG-S18-AY Power MOSFETs for Automotive, MP-25SK, /Tube Renesas Electronics Corporation NP80N04PDG-E1B-AY vs NP80N04NDG-S18-AY
IPD90N04S405ATMA1 Power Field-Effect Transistor, 86A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG NP80N04PDG-E1B-AY vs IPD90N04S405ATMA1
IPD90N04S4-05 Power Field-Effect Transistor, 86A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG NP80N04PDG-E1B-AY vs IPD90N04S4-05
NP80N04NUG-S18-AY Power MOSFETs for Automotive, MP-25SK, /Tube Renesas Electronics Corporation NP80N04PDG-E1B-AY vs NP80N04NUG-S18-AY

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