Datasheets
NP80N03NLE-S18-AY by:

Power Field-Effect Transistor, 80A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN

Part Details for NP80N03NLE-S18-AY by NEC Electronics America Inc

Overview of NP80N03NLE-S18-AY by NEC Electronics America Inc

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Part Details for NP80N03NLE-S18-AY

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NP80N03NLE-S18-AY Part Data Attributes

NP80N03NLE-S18-AY NEC Electronics America Inc
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NP80N03NLE-S18-AY NEC Electronics America Inc Power Field-Effect Transistor, 80A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NEC ELECTRONICS AMERICA INC
Package Description LEAD FREE, MP-25SK, TO-262, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 400 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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