Part Details for NJVMJD44H11D3T4G by onsemi
Overview of NJVMJD44H11D3T4G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NJVMJD44H11D3T4G
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
81Y3913
|
Newark | Transistor, Bipolar, Npn, 80V, 8A, To252, Transistor Polarity:Npn, Collector Emitter Voltage Max:80V, Continuous Collector Current:8A, Power Dissipation:20W, Transistor Mounting:Surface Mount, No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi NJVMJD44H11D3T4G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$4.7600 | Buy Now |
DISTI #
2156-NJVMJD44H11D3T4G-488-ND
|
DigiKey | TRANS NPN 80V 8A DPAK Min Qty: 50 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2176 In Stock |
|
$6.0600 | Buy Now |
DISTI #
NJVMJD44H11D3T4G
|
Avnet Americas | Complementary Power Transistor NPN 80 V 8 A 3-Pin D-PAK T/R (Alt: NJVMJD44H11D3T4G) RoHS: Compliant Min Qty: 138 Package Multiple: 1 Lead time: 0 Weeks, 2 Days | 0 |
|
RFQ | |
DISTI #
NJVMJD44H11D3T4G
|
Avnet Americas | Complementary Power Transistor NPN 80 V 8 A 3-Pin D-PAK T/R - Tape and Reel (Alt: NJVMJD44H11D3T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
RFQ | |
|
Rochester Electronics | MJD44H11 - 8 A, 80 V NPN Bipolar Power Transistor RoHS: Not Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 2176 |
|
$5.2100 / $6.1300 | Buy Now |
DISTI #
NJVMJD44H11D3T4G
|
Avnet Americas | Complementary Power Transistor NPN 80 V 8 A 3-Pin D-PAK T/R - Tape and Reel (Alt: NJVMJD44H11D3T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
RFQ | |
DISTI #
NJVMJD44H11D3T4G
|
Avnet Americas | Complementary Power Transistor NPN 80 V 8 A 3-Pin D-PAK T/R (Alt: NJVMJD44H11D3T4G) RoHS: Compliant Min Qty: 138 Package Multiple: 1 Lead time: 0 Weeks, 2 Days | 0 |
|
RFQ | |
DISTI #
NJVMJD44H11D3T4G
|
Avnet Americas | Complementary Power Transistor NPN 80 V 8 A 3-Pin D-PAK T/R - Tape and Reel (Alt: NJVMJD44H11D3T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
RFQ | |
DISTI #
NJVMJD44H11D3T4G
|
Avnet Americas | Complementary Power Transistor NPN 80 V 8 A 3-Pin D-PAK T/R (Alt: NJVMJD44H11D3T4G) RoHS: Compliant Min Qty: 138 Package Multiple: 1 Lead time: 0 Weeks, 2 Days | 0 |
|
RFQ | |
DISTI #
3615504
|
Farnell | RoHS: Compliant Min Qty: 2500 Container: Reel | 2176 |
|
$5.9825 | Buy Now |
Part Details for NJVMJD44H11D3T4G
NJVMJD44H11D3T4G CAD Models
NJVMJD44H11D3T4G Part Data Attributes
|
NJVMJD44H11D3T4G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NJVMJD44H11D3T4G
onsemi
8 A, 80 V NPN Bipolar Power Transistor, 2500-REEL, Automotive Qualified
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369G | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JESD-30 Code | R-PSSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 85 MHz |