Part Details for NIMD6302R2 by onsemi
Results Overview of NIMD6302R2 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
NIMD6302R2 Information
NIMD6302R2 by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NIMD6302R2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2156-NIMD6302R2-ND
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DigiKey | NFET SO8D 30V .050R Min Qty: 237 Lead time: 36 Weeks Container: Bulk MARKETPLACE PRODUCT |
7385 In Stock |
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$1.2700 | Buy Now |
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DISTI #
86133343
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Verical | Trans MOSFET N-CH Si 30V 6.5A 8-Pin SOIC N T/R Min Qty: 246 Package Multiple: 1 Date Code: 0401 | Americas - 4885 |
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$1.5250 | Buy Now |
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DISTI #
86132974
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Verical | Trans MOSFET N-CH Si 30V 6.5A 8-Pin SOIC N T/R Min Qty: 246 Package Multiple: 1 Date Code: 0501 | Americas - 2500 |
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$1.5250 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 6.5A, 30V, 4-Element, N-Channel, MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 7385 |
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$0.7536 / $1.2200 | Buy Now |
Part Details for NIMD6302R2
NIMD6302R2 CAD Models
NIMD6302R2 Part Data Attributes
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NIMD6302R2
onsemi
Buy Now
Datasheet
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Compare Parts:
NIMD6302R2
onsemi
6500mA, 30V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SOIC-8
Select a part to compare: |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT | |
| Package Description | CASE 751-07, SOIC-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-07 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | ESD PROTECTED | |
| Case Connection | ISOLATED | |
| Configuration | COMPLEX | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 200 pF | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 4 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.67 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NIMD6302R2
This table gives cross-reference parts and alternative options found for NIMD6302R2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NIMD6302R2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6485 | Texas Instruments | Check for Price | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 | NIMD6302R2 vs 2N6485 |
| FDR8305ND84Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT- 8 | NIMD6302R2 vs FDR8305ND84Z |
| ZXMN3A04DN8TA | Diodes Incorporated | $1.1513 | Small Signal Field-Effect Transistor, MS-012AA, SOIC-8 | NIMD6302R2 vs ZXMN3A04DN8TA |
| 2N3921 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, TO-71, 6 PIN | NIMD6302R2 vs 2N3921 |
| SI4832DY-T1-E3 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 6.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | NIMD6302R2 vs SI4832DY-T1-E3 |
| RSQ025P03TR | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN | NIMD6302R2 vs RSQ025P03TR |
| FDW2501N | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | NIMD6302R2 vs FDW2501N |
| SI6954ADQ-T1-GE3 | Vishay Intertechnologies | $0.6625 | Small Signal Field-Effect Transistor, 3.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, HALOGEN FREE AND ROHS COMPLIANT, MO-153, TSSOP-8 | NIMD6302R2 vs SI6954ADQ-T1-GE3 |
| NTGS3455T1G | onsemi | $0.2597 | Single P-Channel Power MOSFET -30V -3.5A 100mΩ, TSOP-6, 3000-REEL | NIMD6302R2 vs NTGS3455T1G |
| ZXMN3A04DN8TA | Zetex / Diodes Inc | Check for Price | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | NIMD6302R2 vs ZXMN3A04DN8TA |
NIMD6302R2 Frequently Asked Questions (FAQ)
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A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using a thermal interface material (TIM) to fill any gaps between the device and the heat sink.
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Although the datasheet specifies the recommended operating conditions, it's essential to note that the maximum allowed voltage on the input pins is typically 5.5V, which is higher than the recommended VCC of 3.3V or 5V. However, it's crucial to ensure that the input voltage does not exceed the maximum rating to prevent damage to the device.
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The NIMD6302R2 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during manufacturing, assembly, and testing. This includes using ESD-safe materials, grounding personnel, and using ESD-protective packaging.
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The recommended soldering profile for the NIMD6302R2 involves a peak temperature of 260°C (500°F) for a maximum of 10 seconds. It's essential to follow a controlled soldering process to prevent damage to the device.