Part Details for NGB8206ANTF4G by onsemi
Overview of NGB8206ANTF4G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NGB8206ANTF4G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-NGB8206ANTF4G-ND
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DigiKey | IGBT 390V 20A D2PAK Min Qty: 237 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2800 In Stock |
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$1.2700 | Buy Now |
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Rochester Electronics | NGB8206 - Insulated Gate Bipolar Transistor ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2800 |
|
$1.0400 / $1.2200 | Buy Now |
Part Details for NGB8206ANTF4G
NGB8206ANTF4G CAD Models
NGB8206ANTF4G Part Data Attributes
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NGB8206ANTF4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NGB8206ANTF4G
onsemi
Ignition IGBT, N-Channel, 20 A, 350 V, D2PAK 2 LEAD, 700-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | ONSEMI | |
Pin Count | 3 | |
Manufacturer Package Code | 418B-04 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Collector Current-Max (IC) | 20 A | |
Collector-Emitter Voltage-Max | 390 V | |
Fall Time-Max (tf) | 14000 ns | |
Gate-Emitter Thr Voltage-Max | 2.1 V | |
Gate-Emitter Voltage-Max | 15 V | |
JESD-609 Code | e3 | |
Operating Temperature-Max | 175 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Rise Time-Max (tr) | 8000 ns | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN |