Datasheets
NEM082081B-12 by: California Eastern Laboratories (CEL)

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

Part Details for NEM082081B-12 by California Eastern Laboratories (CEL)

Overview of NEM082081B-12 by California Eastern Laboratories (CEL)

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for NEM082081B-12

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NEM082081B-12 Part Data Attributes

NEM082081B-12 California Eastern Laboratories (CEL)
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NEM082081B-12 California Eastern Laboratories (CEL) RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Part Life Cycle Code Obsolete
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Package Description FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Collector Current-Max (IC) 7.5 A
Collector-Base Capacitance-Max 35 pF
Collector-Emitter Voltage-Max 16 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F6
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 70 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NEM082081B-12

This table gives cross-reference parts and alternative options found for NEM082081B-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NEM082081B-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLV98CE TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-171A, 6 PIN, BIP RF Power NXP Semiconductors NEM082081B-12 vs BLV98CE
BLV95 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NEM082081B-12 vs BLV95
MRF892 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-6 Advanced Semiconductor Inc NEM082081B-12 vs MRF892
BLV94 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NEM082081B-12 vs BLV94
MS1451 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, M118, 6 PIN Microsemi Corporation NEM082081B-12 vs MS1451
CBSL15 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc NEM082081B-12 vs CBSL15
TP3022B RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN Motorola Semiconductor Products NEM082081B-12 vs TP3022B
PH0810-15 UHF BAND, Si, NPN, RF POWER TRANSISTOR TE Connectivity NEM082081B-12 vs PH0810-15
2SC2933 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC, FM-6 Mitsubishi Electric NEM082081B-12 vs 2SC2933
MRF892 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NEM082081B-12 vs MRF892

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