Datasheets
NEM081081E-12 by: California Eastern Laboratories (CEL)

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

Part Details for NEM081081E-12 by California Eastern Laboratories (CEL)

Overview of NEM081081E-12 by California Eastern Laboratories (CEL)

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Part Details for NEM081081E-12

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NEM081081E-12 Part Data Attributes

NEM081081E-12 California Eastern Laboratories (CEL)
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NEM081081E-12 California Eastern Laboratories (CEL) RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Part Life Cycle Code Obsolete
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Package Description FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Collector Current-Max (IC) 3 A
Collector-Base Capacitance-Max 19.5 pF
Collector-Emitter Voltage-Max 18 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F6
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 35 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NEM081081E-12

This table gives cross-reference parts and alternative options found for NEM081081E-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NEM081081E-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLV94 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NEM081081E-12 vs BLV94
TP3012 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN Motorola Semiconductor Products NEM081081E-12 vs TP3012
Part Number Description Manufacturer Compare
BLV98CE TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-171A, 6 PIN, BIP RF Power NXP Semiconductors NEM081081E-12 vs BLV98CE
BLV95 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NEM081081E-12 vs BLV95
MRF892 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-6 Advanced Semiconductor Inc NEM081081E-12 vs MRF892
BLV94 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NEM081081E-12 vs BLV94
MS1451 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, M118, 6 PIN Microsemi Corporation NEM081081E-12 vs MS1451
CBSL15 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc NEM081081E-12 vs CBSL15
TP3022B RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN Motorola Semiconductor Products NEM081081E-12 vs TP3022B
PH0810-15 UHF BAND, Si, NPN, RF POWER TRANSISTOR TE Connectivity NEM081081E-12 vs PH0810-15
2SC2933 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC, FM-6 Mitsubishi Electric NEM081081E-12 vs 2SC2933
MRF892 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NEM081081E-12 vs MRF892

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