Part Details for NE900175 by Renesas Electronics Corporation
Overview of NE900175 by Renesas Electronics Corporation
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- Part Data Attributes: (Available)
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Part Details for NE900175
NE900175 CAD Models
NE900175 Part Data Attributes
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NE900175
Renesas Electronics Corporation
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Datasheet
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NE900175
Renesas Electronics Corporation
KU BAND, GaAs, N-CHANNEL, RF POWER, FET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 0.3 A | |
| FET Technology | METAL SEMICONDUCTOR | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 8 dB | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |