Part Details for NE85633S-T1B-A by California Eastern Laboratories (CEL)
Overview of NE85633S-T1B-A by California Eastern Laboratories (CEL)
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NE85633S-T1B-A
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN | 567 |
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Part Details for NE85633S-T1B-A
NE85633S-T1B-A CAD Models
NE85633S-T1B-A Part Data Attributes
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NE85633S-T1B-A
California Eastern Laboratories (CEL)
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Datasheet
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NE85633S-T1B-A
California Eastern Laboratories (CEL)
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 1 pF | |
Collector-Emitter Voltage-Max | 12 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 125 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 0.2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 7000 MHz |