Datasheets
NE85633-A by: California Eastern Laboratories (CEL)

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3

Part Details for NE85633-A by California Eastern Laboratories (CEL)

Overview of NE85633-A by California Eastern Laboratories (CEL)

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Part Details for NE85633-A

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NE85633-A Part Data Attributes:

NE85633-A California Eastern Laboratories (CEL)
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NE85633-A California Eastern Laboratories (CEL) RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3
Part Life Cycle Code Obsolete
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.1 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 7000 MHz

Alternate Parts for NE85633-A

This table gives cross-reference parts and alternative options found for NE85633-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE85633-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE85633-T1B-A RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3 California Eastern Laboratories (CEL) NE85633-A vs NE85633-T1B-A
KTC3770S-A RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN KEC NE85633-A vs KTC3770S-A
KTC3770S-B RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN KEC NE85633-A vs KTC3770S-B
KTC3770S-C RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN KEC NE85633-A vs KTC3770S-C
Part Number Description Manufacturer Compare
KTC3770S-A RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN KEC NE85633-A vs KTC3770S-A
NE85633-T1B-A RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, MINIMOLD PACKAGE-3 California Eastern Laboratories (CEL) NE85633-A vs NE85633-T1B-A
KTC3770S-B RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN KEC NE85633-A vs KTC3770S-B
KTC3770S-C RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN KEC NE85633-A vs KTC3770S-C
NE85633-T1B-A RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, PLASTIC PACKAGE-3 NEC Electronics Group NE85633-A vs NE85633-T1B-A

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