Datasheets
NE76000 by:

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

Part Details for NE76000 by California Eastern Laboratories (CEL)

Overview of NE76000 by California Eastern Laboratories (CEL)

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Consumer Electronics Education and Research Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Renewable Energy Entertainment and Gaming Robotics and Drones

Part Details for NE76000

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NE76000 Part Data Attributes:

NE76000 California Eastern Laboratories (CEL)
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NE76000 California Eastern Laboratories (CEL) RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Package Description UNCASED CHIP, R-XUUC-N6
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 5 V
Drain Current-Max (ID) 0.05 A
FET Technology METAL SEMICONDUCTOR
Highest Frequency Band K BAND
JESD-30 Code R-XUUC-N6
Number of Elements 1
Number of Terminals 6
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 8 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for NE76000

This table gives cross-reference parts and alternative options found for NE76000. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE76000, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE76000 RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-6 NEC Electronics Group NE76000 vs NE76000
NE76000 RF Small Signal Field-Effect Transistor, 2-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-6 NEC Electronics America Inc NE76000 vs NE76000
Part Number Description Manufacturer Compare
FHX05X RF Small Signal Field-Effect Transistor FUJITSU Semiconductor Limited NE76000 vs FHX05X
FHX13X RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE FUJITSU Limited NE76000 vs FHX13X
NE24200 RF Small Signal Field-Effect Transistor, 2-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Electronics America Inc NE76000 vs NE24200
NE33200N RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 NEC Electronics America Inc NE76000 vs NE33200N
NE27200-A RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 NEC Electronics Group NE76000 vs NE27200-A
NE33200M RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET NEC Electronics Group NE76000 vs NE33200M
NE38018T2-A RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE76000 vs NE38018T2-A
NE33200M RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-4 California Eastern Laboratories (CEL) NE76000 vs NE33200M
NE32400 RF Small Signal Field-Effect Transistor, KA Band, Silicon, N-Channel, Hetero-junction FET, DIE-6 NEC Electronics Group NE76000 vs NE32400
NE24200 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-6 California Eastern Laboratories (CEL) NE76000 vs NE24200

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