Part Details for NE6510179A by California Eastern Laboratories (CEL)
Overview of NE6510179A by California Eastern Laboratories (CEL)
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NE6510179A
NE6510179A CAD Models
NE6510179A Part Data Attributes:
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NE6510179A
California Eastern Laboratories (CEL)
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Datasheet
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NE6510179A
California Eastern Laboratories (CEL)
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
| Package Description | MICROWAVE, R-PQMW-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 5.5 V | |
| Drain Current-Max (ID) | 2.8 A | |
| FET Technology | HETERO-JUNCTION | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-PQMW-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROWAVE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | QUAD | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE6510179A
This table gives cross-reference parts and alternative options found for NE6510179A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE6510179A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE6510179A | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET | NEC Electronics Group | NE6510179A vs NE6510179A |
| NE6510179A-T1-A | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN | NEC Electronics Group | NE6510179A vs NE6510179A-T1-A |
| NE6510179A-T1 | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET | NEC Electronics Group | NE6510179A vs NE6510179A-T1 |