Part Details for NE6510179A-T1 by California Eastern Laboratories (CEL)
Results Overview of NE6510179A-T1 by California Eastern Laboratories (CEL)
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NE6510179A-T1 Information
NE6510179A-T1 by California Eastern Laboratories (CEL) is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NE6510179A-T1
NE6510179A-T1 CAD Models
NE6510179A-T1 Part Data Attributes
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NE6510179A-T1
California Eastern Laboratories (CEL)
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Datasheet
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NE6510179A-T1
California Eastern Laboratories (CEL)
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
| Package Description | MICROWAVE, R-PQMW-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 5.5 V | |
| Drain Current-Max (ID) | 2.8 A | |
| FET Technology | HETERO-JUNCTION | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-PQMW-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROWAVE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | QUAD | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE6510179A-T1
This table gives cross-reference parts and alternative options found for NE6510179A-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE6510179A-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NE6510179A | California Eastern Laboratories (CEL) | Check for Price | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN | NE6510179A-T1 vs NE6510179A |