Part Details for NE5550779A-T1A-A by Renesas Electronics Corporation
Overview of NE5550779A-T1A-A by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NE5550779A-T1A-A
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-NE5550779A-T1A-A-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 77 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
20036 In Stock |
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$3.9100 | Buy Now |
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Rochester Electronics | NE5550779 - RF Power Field-Effect Transistor, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 20036 |
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$3.3600 / $3.9500 | Buy Now |
Part Details for NE5550779A-T1A-A
NE5550779A-T1A-A CAD Models
NE5550779A-T1A-A Part Data Attributes:
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NE5550779A-T1A-A
Renesas Electronics Corporation
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Datasheet
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NE5550779A-T1A-A
Renesas Electronics Corporation
NE5550779A-T1A-A
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 2.1 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Number of Elements | 1 | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 17.8 W |