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NE5550779A-T1A-A by: Renesas Electronics Corporation

NE5550779A-T1A-A

Part Details for NE5550779A-T1A-A by Renesas Electronics Corporation

Overview of NE5550779A-T1A-A by Renesas Electronics Corporation

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Price & Stock for NE5550779A-T1A-A

Part # Distributor Description Stock Price Buy
DISTI # 2156-NE5550779A-T1A-A-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 77 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 20036
In Stock
  • 77 $3.9100
$3.9100 Buy Now
Rochester Electronics NE5550779 - RF Power Field-Effect Transistor, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 20036
  • 1 $3.9500
  • 25 $3.8700
  • 100 $3.7100
  • 500 $3.5500
  • 1,000 $3.3600
$3.3600 / $3.9500 Buy Now

Part Details for NE5550779A-T1A-A

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NE5550779A-T1A-A Part Data Attributes:

NE5550779A-T1A-A Renesas Electronics Corporation
Buy Now Datasheet
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NE5550779A-T1A-A Renesas Electronics Corporation NE5550779A-T1A-A
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Configuration SINGLE
Drain Current-Max (ID) 2.1 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 17.8 W

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