Part Details for NE5520379A-T1A by California Eastern Laboratories (CEL)
Overview of NE5520379A-T1A by California Eastern Laboratories (CEL)
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Part Details for NE5520379A-T1A
NE5520379A-T1A CAD Models
NE5520379A-T1A Part Data Attributes:
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NE5520379A-T1A
California Eastern Laboratories (CEL)
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NE5520379A-T1A
California Eastern Laboratories (CEL)
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
| Package Description | MICROWAVE, R-XQMW-F4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 15 V | |
| Drain Current-Max (ID) | 1.5 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-XQMW-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROWAVE | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | QUAD | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |