Part Details for NE5511279A-T1 by California Eastern Laboratories (CEL)
Overview of NE5511279A-T1 by California Eastern Laboratories (CEL)
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NE5511279A-T1
NE5511279A-T1 CAD Models
NE5511279A-T1 Part Data Attributes:
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NE5511279A-T1
California Eastern Laboratories (CEL)
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Datasheet
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NE5511279A-T1
California Eastern Laboratories (CEL)
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
| Package Description | MICROWAVE, R-XQMW-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 8 V | |
| Drain Current-Max (ID) | 3 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-XQMW-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROWAVE | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | QUAD | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for NE5511279A-T1
This table gives cross-reference parts and alternative options found for NE5511279A-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE5511279A-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE5511279A-T1A | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN | NEC Electronics Group | NE5511279A-T1 vs NE5511279A-T1A |
| NE5511279A-T1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 79A, 4 PIN | Renesas Electronics Corporation | NE5511279A-T1 vs NE5511279A-T1 |
| NE5511279A-T1A-A | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN | NEC Electronics Group | NE5511279A-T1 vs NE5511279A-T1A-A |
| NE5511279A-T1 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN | NEC Electronics America Inc | NE5511279A-T1 vs NE5511279A-T1 |
| NE5511279A-T1A | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN | California Eastern Laboratories (CEL) | NE5511279A-T1 vs NE5511279A-T1A |
| NE5511279A-A | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN | NEC Electronics Group | NE5511279A-T1 vs NE5511279A-A |