Part Details for NDT456P by National Semiconductor Corporation
Overview of NDT456P by National Semiconductor Corporation
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Part Details for NDT456P
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NDT456P Part Data Attributes
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NDT456P
National Semiconductor Corporation
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Datasheet
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NDT456P
National Semiconductor Corporation
Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 7.5 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261 | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 1.1 W | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 260 ns | |
| Turn-on Time-Max (ton) | 140 ns |