Part Details for NDS9936 by Fairchild Semiconductor Corporation
Overview of NDS9936 by Fairchild Semiconductor Corporation
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NDS9936
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4902 |
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RFQ | ||
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Bristol Electronics | Min Qty: 9 | 1815 |
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$0.1575 / $0.5625 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1452 |
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$0.1950 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1992 |
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$0.3541 / $1.3620 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 7335 |
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$0.4650 / $1.5500 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1920 |
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$0.5425 / $1.5500 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 5A, 30V, 0.05ohm, 2-Element, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 31005 |
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$0.5028 / $0.5915 | Buy Now |
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Chip1Cloud | MOSFET 2N-CH 30V 5A 8-SOIC | 31000 |
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RFQ |
Part Details for NDS9936
NDS9936 CAD Models
NDS9936 Part Data Attributes
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NDS9936
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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NDS9936
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT | |
Package Description | SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NDS9936
This table gives cross-reference parts and alternative options found for NDS9936. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS9936, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NDS9956AD84Z | Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | NDS9936 vs NDS9956AD84Z |
FDS4935A_NL | Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | NDS9936 vs FDS4935A_NL |
934055451118 | Power Field-Effect Transistor | Nexperia | NDS9936 vs 934055451118 |
IRF7205 | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | NDS9936 vs IRF7205 |
IRF7303 | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | NDS9936 vs IRF7303 |
IRF7406 | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | NDS9936 vs IRF7406 |
HP4936DYT | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Harris Semiconductor | NDS9936 vs HP4936DYT |
IRF7403TR | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | NDS9936 vs IRF7403TR |
RF1K4922396 | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.36ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Harris Semiconductor | NDS9936 vs RF1K4922396 |
HUF76105DK8 | Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | Fairchild Semiconductor Corporation | NDS9936 vs HUF76105DK8 |