NDS9430
Description: Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Overview of NDS9430 by National Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NDS9430 by National Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1529
RFQ
Quest Components MOSFET Transistor, P-Channel, SO 349
  • 1 $1.7500
  • 15 $0.8750
  • 70 $0.5250
$0.5250 / $1.7500 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 2
  • 1 $1.2402
$1.2402 Buy Now

CAD Models for NDS9430 by National Semiconductor Corporation
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Part Data Attributes for NDS9430 by National Semiconductor Corporation

NDS9430
National Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
5.3 A
Drain-source On Resistance-Max
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Power Dissipation Ambient-Max
1 W
Power Dissipation-Max (Abs)
2.5 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. NDS9430
    National Semiconductor Corporation
    Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    VS

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