NDS8936
Description: Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Overview of NDS8936 by National Semiconductor Corporation

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for NDS8936 by National Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   7500
RFQ

CAD Models for NDS8936 by National Semiconductor Corporation
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Part Data Attributes for NDS8936 by National Semiconductor Corporation

NDS8936
National Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
5.3 A
Drain-source On Resistance-Max
0.035 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
20 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
70 ns
Turn-on Time-Max (ton)
50 ns
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  1. NDS8936
    National Semiconductor Corporation
    Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    VS

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