Datasheets
NDS356P by:

Small Signal Field-Effect Transistor, 1.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

Part Details for NDS356P by Fairchild Semiconductor Corporation

Overview of NDS356P by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NDS356P

Part # Distributor Description Stock Price Buy
Rochester Electronics Small Signal Field-Effect Transistor, 1.1A, 20V, P-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 178
  • 1 $0.4436
  • 25 $0.4347
  • 100 $0.4170
  • 500 $0.3992
  • 1,000 $0.3771
$0.3771 / $0.4436 Buy Now

Part Details for NDS356P

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NDS356P Part Data Attributes:

NDS356P Fairchild Semiconductor Corporation
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NDS356P Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 1.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SUPERSOT-3
Pin Count 3
Manufacturer Package Code SUPERSOT
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.1 A
Drain-source On Resistance-Max 0.21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDS356P

This table gives cross-reference parts and alternative options found for NDS356P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS356P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDS356P 1100mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 Rochester Electronics LLC NDS356P vs NDS356P
NDS356PD87Z Small Signal Field-Effect Transistor, 1.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation NDS356P vs NDS356PD87Z
NDS356P/L99Z 1100mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments NDS356P vs NDS356P/L99Z
NDS356P/S62Z 1100mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments NDS356P vs NDS356P/S62Z
NDS356PL99Z Small Signal Field-Effect Transistor, 1.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation NDS356P vs NDS356PL99Z
Part Number Description Manufacturer Compare
NTR1P02LT1 1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, MINIATURE, CASE 318-08, 3 PIN Rochester Electronics LLC NDS356P vs NTR1P02LT1
NTR1P02T3 1000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, CASE 318-09, TO-236, 3 PIN onsemi NDS356P vs NTR1P02T3
NVTR01P02LT1G Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ Small Signal MOSFET -20V -1.3A 220 mOhm Single P-Channel SOT-23 Logic Level, SOT-23 (TO-236) 3 LEAD, 3000-REEL, Automotive Qualified onsemi NDS356P vs NVTR01P02LT1G
NTR1P02T1G 1000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, MINIATURE, CASE 318-09, TO-236, 3 PIN Rochester Electronics LLC NDS356P vs NTR1P02T1G
PMV160UP,215 PMV160UP - 20 V, 1.2 A P-channel Trench MOSFET@en-us TO-236 3-Pin Nexperia NDS356P vs PMV160UP,215
NTR1P02LT3G Single P-Channel Power MOSFET -20V, -1.3A, 220mΩ, SOT-23 (TO-236) 3 LEAD, 10000-REEL onsemi NDS356P vs NTR1P02LT3G
NTR1P02T1G Single P-Channel Power MOSFET -20V, -1A, 180mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi NDS356P vs NTR1P02T1G
PMV160UPVL PMV160UP - 20 V, 1.2 A P-channel Trench MOSFET@en-us TO-236 3-Pin Nexperia NDS356P vs PMV160UPVL
NDS336P Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SUPERSOT-3 Fairchild Semiconductor Corporation NDS356P vs NDS336P
NTR1P02T1 1000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, CASE 318-09, TO-236, 3 PIN onsemi NDS356P vs NTR1P02T1

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