Part Details for NDP606AE by Texas Instruments
Overview of NDP606AE by Texas Instruments
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for NDP606AE
NDP606AE CAD Models
NDP606AE Part Data Attributes
|
|
NDP606AE
Texas Instruments
Buy Now
Datasheet
|
Compare Parts:
NDP606AE
Texas Instruments
48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Part Package Code | SFM | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for NDP606AE
This table gives cross-reference parts and alternative options found for NDP606AE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDP606AE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | NDP606AE vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | NDP606AE vs IPB80N06S2LH5ATMA1 |
| FQA11N90 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 11.4A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3P, 3 PIN | NDP606AE vs FQA11N90 |
| FQAF7N80 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | NDP606AE vs FQAF7N80 |
| SPP80N03S2L-05 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | NDP606AE vs SPP80N03S2L-05 |
| NDP7050L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | NDP606AE vs NDP7050L |
| FQAF65N06 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 49A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | NDP606AE vs FQAF65N06 |
| FDP14N60 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 600V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | NDP606AE vs FDP14N60 |
| IXFH32N50 | IXYS Corporation | $1.1612 | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | NDP606AE vs IXFH32N50 |
| IXFX66N50Q2 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 66A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | NDP606AE vs IXFX66N50Q2 |