Datasheets
NDP508A by:

Power Field-Effect Transistor, 19A I(D), 80V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for NDP508A by National Semiconductor Corporation

Overview of NDP508A by National Semiconductor Corporation

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Applications Industrial Automation Computing and Data Storage

Price & Stock for NDP508A

Part # Distributor Description Stock Price Buy
Bristol Electronics   235
RFQ
Quest Components   188
  • 1 $3.3840
  • 31 $2.2560
  • 112 $2.0868
$2.0868 / $3.3840 Buy Now

Part Details for NDP508A

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NDP508A Part Data Attributes:

NDP508A National Semiconductor Corporation
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NDP508A National Semiconductor Corporation Power Field-Effect Transistor, 19A I(D), 80V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 60 W
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

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